SiC整流器件发展现状及展望  

Developing Present Situation and Prospect of SiC Rectifier Device

作　　者：耿凯鸽 

机构地区：[1]西安卫光科技有限公司,陕西西安710065

出　　处：《山西电子技术》2014年第4期93-94,共2页Shanxi Electronic Technology

摘　　要：阐述了碳化硅(SiC)材料的优异特性,并在此基础上,针对目前处于商业化热点的SiC整流器件,进行了重点介绍,分析了国内外发展现状,并对未来发展趋势做出展望。This article expounds the excellent properties of silicon carbide （SiC） materials. On this basis, the SiC rectifier devices is mainly introduced, which is the commercial hot spots now. Finally it analyzes the current situation of development both at home and abroad, and makes a prospect for the future development trend.

关 键 词：宽禁带半导体 碳化硅 整流器件 

分 类 号：TN304.24[电子电信—物理电子学]