表面预处理对InSb钝化层界面的影响  

Effect of pretreatment on interface between the passivation layer and InSb substrate

作　　者：肖钰[1] 史梦然[1] 宁玮[1] 段建春[1] 

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2014年第8期902-905,共4页Laser & Infrared

摘　　要：本文介绍了采用不同的方法对InSb表面进行表面预处理,来改善InSb钝化膜层的电学性能。通过对InSb MIS结构进行C-V测试来评价不同方法预处理制备的钝化结构的电学特性。结果表明等离子预处理能明显改善InSb衬底和钝化层之间的界面性能,尤其是选用N2O等离子预处理InSb衬底表面,在控制界面陷阱和减少钝化层固定电荷方面,效果更明显,有利于提高InSb红外器件的可靠性。In order to improve electrical properties of the interface between the passivation layer and InSb substrate, different surface pretreatments are used.Through the C-V testing for InSb MIS structure,electrical characteristics of passivation structures produced by different surface pretreatments were evaluated.The results show that the plasma pretreatment can significantly improve the interface between the passivation layer and InSb substrate,especially N2 O plasma can control interface traps and reduce the fixed charges.It is obvious to help to improve the reliability of InSb IR devices.

关 键 词：INSB 钝化 预处理 C—V 

分 类 号：TN213[电子电信—物理电子学]