大功率660nm半导体激光器的电流电压特性  

Current-Voltage Characteristics of High Power 660 nm Laser Diodes

作　　者：朱振[1,2] 李沛旭 张新 王钢[1] 徐现刚[2,3] 

机构地区：[1]中山大学物理科学与工程技术学院,广州510275 [2]山东华光光电子有限公司,济南250100 [3]山东大学晶体材料国家重点实验室,济南250100

出　　处：《半导体技术》2014年第9期661-665,共5页Semiconductor Technology

基　　金：国家重点基础研究发展计划(973计划)资助项目(2013CB632801)

摘　　要：利用Zn扩散形成非吸收窗口技术,制备了大功率红光660 nm半导体激光器。对封装后的器件进行电流电压(I-V)特性测试。由于材料本身串联电阻的影响,半导体激光器的I-V曲线不再符合理想二极管I-V特性方程。通过数据拟合,得到半导体激光器的串联电阻约为0.5Ω。测试中还发现了两种异常I-V曲线,分别源于器件并联电阻及寄生二极管的影响。对每种I-V曲线建立了电路模型,并推导了I-V特性方程。分析认为制作过程中的金属工艺、烧结工艺和Zn扩散工艺等都会影响半导体激光器的电流分布及I-V特性。I-V特性测试可以用于半导体激光器的工艺监控与失效分析等。The technology forming the non-absorbent window with the Zn diffusion was applied to fabricate high power 660 nm red laser diodes（ LDs）. Current-voltage（ I-V） characteristics were measured for the packaged devices. The I-V curves were not in accordance with the ideal diode I-V equation due to the material series resistance. The value of the series resistance was calculated to be about 0. 5 Ω through the data fit. In the measurements,two abnormal I-V curves were also observed,which were related to the parallel resistance and parasitic diode of LDs,respectively. The circuit model was established and the I-V equation was deduced for each I-V curve. It revealed that the current distribution and I-V characteristics of the LDs were affected by the chip processes,such as the metallization,soldering and Zn diffusion. The I-V characteristics measurement could be used in the process monitoring and failure analysis of LDs.

关 键 词：半导体激光器 ZN扩散 电流电压特性 理想二极管 寄生效应 

分 类 号：TN248.4[电子电信—物理电子学]