含弹道输运模型的纳米尺寸GaAs HEMT电流方程  

A Nano-Scale GaAs HEMTs Electric Equation Including the Ballistic Transport Model

作　　者：朱兆旻[1] 赵青云[1] 于宝旗 

机构地区：[1]江南大学物联网工程学院,江苏无锡214122

出　　处：《半导体技术》2014年第9期679-683,共5页Semiconductor Technology

基　　金：专用集成电路与系统国家重点实验室开放研究课题基金资助项目(11KF003)

摘　　要：提出了一个包含改进的准弹道输运模型的砷化镓(GaAs)高电子迁移率晶体管(HEMT)的漏电流方程。弹道输运模型是基于玻耳兹曼输运方程和迁移率的扩展定义,即单位电场中载流子在沟道中以弹道轨迹运动的平均速度。对平均速度的求解没有采用任何近似,并采用一种平滑的拟合方程将弹道迁移率和常规迁移率整合在一起。同时还研究了纳米尺度GaAs HEMT中温度、沟道长度和沟道掺杂浓度对有效迁移率的影响。最后,把有效迁移率模型和电流方程分别与实验数据和数值仿真结果进行比较,误差小于5%。A drain-current equation for the GaAs HEMTs including the improved quasi-ballistic transport model was presented. The ballistic model was based on the Boltzmann transportation equation and the definition of the mobility,and it used a naturally extended definition of the mobilityinto the ballistic regime for the carrier in the channel as the average velocity per unit electric field. The average velocity was solved analytically without any approximation. A smoothing fitted function was used to integrate the ballistic and the conventional mobility into one equation. Besides,the effects of the temperature,channel length and concentration on the effective mobility for the nano-scale HEMTs were also investigated. Finally,the effective mobility model and current equation were compared with the experimental data and numerical simulation results,respectively,and the error was less than 5%.

关 键 词：漏电流 弹道效应 玻耳兹曼输运方程 高电子迁移率晶体管(HEMT) 基于电荷的模型 

分 类 号：TN386[电子电信—物理电子学]