铒离子注入绝缘体上Si的射程分布研究  

Investigation on range distribution of Er ions implanted in silicon-on-insulator

作　　者：秦希峰[1] 马桂杰[1] 时术华[1] 王凤翔[1] 付刚[1] 赵金花[1] 

机构地区：[1]山东建筑大学理学院,济南250101

出　　处：《物理学报》2014年第17期205-209,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:11205096);山东省自然科学基金(批准号:ZR2011AM011;ZR2013AM014);山东建筑大学博士基金(批准号:XNBS1341);济南市科技发展项目(批准号:201202092;OUT_02440)资助的课题~~

摘　　要：利用离子注入掺杂技术设计、制作半导体集成器件时,了解离子注入半导体材料的射程分布和横向离散规律等是很重要的.用200—500 keV能量的铒(Er)离子注入SOI(silicon-on-insulator,绝缘体上的硅)样品中,利用卢瑟福背散射(RBS)技术研究了剂量为2×1015cm-2的Er离子注入SOI的平均投影射程Rp和射程离散△Rp,把测出的实验值和SRIM软件得到的理论计算值进行了比较,发现平均投影射程Rp的实验值跟理论计算值符合较好,射程离散△Rp的实验值和理论计算值差别大一些.It is very important to take into consideration the distribution of range, range straggling, and lateral spread of ions implanted into semiconductor materials during designing and fabrication of semiconductor integration devices by means of ion implantation. Er ions with energies between 200 and 500 keV are implanted in SOI （silicon-on-insulator） samples. The mean projection range Rp and the range stragglings ARp of Er ions with a dose of 2 × 10^15 cm-2 implanted in SOI samples are measured by Rutherford backscattering （RBS） technique. The obtained data are then compared with those predicted by TRIM codes. It is seen that the experimental data of Rp agree well with the theoretical values. However, there are great differences between the experimental data and the theoretical values of △Rp.

关 键 词：离子注入 绝缘体上Si 投影射程和射程离散 卢瑟福背散射技术 

分 类 号：O562.5[理学—原子与分子物理]