化学气相沉积法制备石墨烯的铜衬底预处理研究  

The pre-treatment of copper for graphene synthesis

作　　者：王浪[1,2] 冯伟[1,2] 杨连乔[1] 张建华[1] 

机构地区：[1]上海大学新型显示技术及应用集成教育部重点实验室,上海200072 [2]上海大学材料科学与工程学院,上海200072

出　　处：《物理学报》2014年第17期217-223,共7页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(973计划)(批准号:2011CB013100);国家科技支撑计划(批准号:2011BAE01B14)资助的课题~~

摘　　要：铜作为一种在化学气相沉积法制备石墨烯中被广泛采用的衬底材料,其表面形貌和质量对石墨烯的品质有较大的影响.提出了一种简单有效的铜衬底预处理方法,在生长石墨烯前,将铜衬底在浓度为1 mol/L的硝酸铁水溶液中进行预刻蚀,研究了不同刻蚀时间的影响.发现当预刻蚀时间为90 s时,经石墨烯生长后得到了相对平整且无杂质颗粒的表面;与盐酸预刻蚀及电化学抛光方法进行了比较,实验结果表明,硝酸铁溶液预刻蚀的效果优于盐酸处理,可与电化学抛光效果比拟,且操作更为简单快捷.经过不同型号铜衬底实验验证,此方法具有普遍适用性.Graphene synthesis by chemical-vapor-deposition （CVD） has attracted great interest. As the substrates for graphene growth, copper has become a common choice because its capacity could produce high-quality and uniform monolayer graphene. Morphology and surface conditions of the copper foil have great influence on the quality of the graphene grown on it. Here we report a rapid and effective copper pre-treatment method to improve the quality of graphene. After a pre-etching in 1 mol/L Fe（NO3）3 aqueous solutions for 90 s, the quality of the copper foil surface has been improved. Compared with the HCl treatment and electro-chemical polishing, Fe（NO3）3 pre-etching can generate a better result and has been verified to have general applicability for different types of copper foils.

关 键 词：石墨烯 铜 预处理 化学气相沉积 

分 类 号：O613.71[理学—无机化学]