SnO_2/p^+-Si异质结器件的电致发光:利用TiO_2盖层提高发光强度  

Electroluminescence from SnO_2/p^+-Si heterostructured light-emitting device: enhancing its intensity via capping a TiO_2 film

作　　者：蒋昊天[1] 杨扬[1] 汪粲星 朱辰[1] 马向阳[1] 杨德仁[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《物理学报》2014年第17期259-263,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:51372219和61176042);国家重点基础研究发展计划(973计划)(批准号:2013CB632102);浙江省自然科学基金(批准号:R4090055);浙江省创新团队项目(批准号:2009R50005)资助的课题~~

摘　　要：通过在重掺硼硅(p+-Si)衬底上溅射SnO2薄膜并在O2气氛下800℃热处理形成SnO2/p+-Si异质结.基于该异质结的器件可在低电压(电流)驱动下电致发光.进一步地,通过在SnO2薄膜上增加TiO2盖层,使器件的电致发光获得显著增强.这是由于TiO2盖层的引入,一方面使SnO2薄膜更加致密,减少了非辐射复合中心;另一方面TiO2较大的折射率和合适的厚度使SnO2薄膜电致发光的出光效率得到提高.Low-voltage （current） driven electroluminescence （EL） has been achieved in the light-emitting device （LED） with a SnO2/p＋-Si heterostructure, which is formed by sputtering SnO2 film on a p＋-Si substrate, followed by annealing at 800 ℃ in O2 ambient. Furthermore, by means of capping a TiO2 film onto the SnO2 film, the modified LED exhibits significantly enhanced EL. The densification of SnO2 film as a result of the TiO2-capping is responsible for reducing the non-radiative centers. Moreover, the large refractive index and appropriate thickness of TiO2-capped layer are favorable for the extraction of emitted light from SnO2 film. Such two effects of TiO2-capping contribute to the aforementioned enhanced EL.

关 键 词：SNO2 p+-Si异质结 TiO2盖层 电致发光 

分 类 号：TN383.1[电子电信—物理电子学]