Characterization of tetragonal distortion in a thick Al_(0.2)Ga_(0.8)N epilayer with an AlN interlayer by Rutherford backscattering/channeling  

作　　者：王欢 姚淑德 

机构地区：[1]State Key Laboratory of Nuclear Physics and Technology,Peking University [2]Chinese Academy of Engineering Physics

出　　处：《Chinese Physics B》2014年第9期354-357,共4页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.91226202)

摘　　要：An Al0.2Ga0.8N/AlN/Al0.2Ga0.8N heterostructure was grown by metalorganic chemical vapor deposition on a sapphire （0001） substrate with a thick （〉 1 μm） GaN intermediate layer. The Al composition was determined by Rutherford backscattering （RBS）. Using the channeling scan around an off-normal [1213] axis in the （1010） plane of the Al0.2Ga0.8N layer, the tetragonal distortion eT, which is caused by the elastic strain in the epilayer, is investigated. The results show that eT in the high-quality Al0.2Ga0.8N layer is dramatically released by the AIN interlayer from 0.66% to 0.27%.An Al0.2Ga0.8N/AlN/Al0.2Ga0.8N heterostructure was grown by metalorganic chemical vapor deposition on a sapphire （0001） substrate with a thick （〉 1 μm） GaN intermediate layer. The Al composition was determined by Rutherford backscattering （RBS）. Using the channeling scan around an off-normal [1213] axis in the （1010） plane of the Al0.2Ga0.8N layer, the tetragonal distortion eT, which is caused by the elastic strain in the epilayer, is investigated. The results show that eT in the high-quality Al0.2Ga0.8N layer is dramatically released by the AIN interlayer from 0.66% to 0.27%.

关 键 词：ALGAN Rutherford backscattering/channeling elastic strain 

分 类 号：TN304.055[电子电信—物理电子学]