Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate  

作　　者：蒋超 陆海 陈敦军 任芳芳 张荣 郑有炓 

机构地区：[1]Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and School of Electronic Science and Engineering,Nanjing University

出　　处：《Chinese Physics B》2014年第9期414-418,共5页中国物理B（英文版）

基　　金：supported by the National Basic Research Program of China(Grant Nos.2010CB327504,2011CB922100,and 2011CB301900);the National Natural Science Foundation of China(Grant Nos.60936004 and 11104130);the Natural Science Foundation of Jiangsu Province,China(Grant Nos.BK2011556 and BK2011050);the Priority Academic Development Program of Jiangsu Higher Education Institutions,China

摘　　要：In this work, the breakdown characteristics of AlGaN/GaN planar Schottky barrier diodes （SBDs） fabricated on the silicon substrate are investigated. The breakdown voltage （BV） of the SBDs first increases as a function of the anodeto-cathode distance and then tends to saturate at larger inter-electrode spacing. The saturation behavior of the BV is likely caused by the vertical breakdown through the intrinsic GaN buffer layer on silicon, which is supported by the post-breakdown primary leakage path analysis with the emission microscopy. Surface passivation and field plate termination are found effective to suppress the leakage current and enhance the BV of the SBDs. A high BV of 601 V is obtained with a low on-resistance of 3.15 mΩ·cm^2.In this work, the breakdown characteristics of AlGaN/GaN planar Schottky barrier diodes （SBDs） fabricated on the silicon substrate are investigated. The breakdown voltage （BV） of the SBDs first increases as a function of the anodeto-cathode distance and then tends to saturate at larger inter-electrode spacing. The saturation behavior of the BV is likely caused by the vertical breakdown through the intrinsic GaN buffer layer on silicon, which is supported by the post-breakdown primary leakage path analysis with the emission microscopy. Surface passivation and field plate termination are found effective to suppress the leakage current and enhance the BV of the SBDs. A high BV of 601 V is obtained with a low on-resistance of 3.15 mΩ·cm^2.

关 键 词：ALGAN/GAN Schottky barrier diodes silicon substrate BREAKDOWN 

分 类 号：TN311.7[电子电信—物理电子学] TN304.23