铝分层诱导晶化非晶硅的研究  

Study of Stratified Crystallization of Amorphous Silicon Induced by Aluminum

作　　者：孙钦钦[1] 王鹏[1] 陈松岩[1] 李成[1] 黄巍[1] 

机构地区：[1]厦门大学物理与机电工程学院,福建厦门361005

出　　处：《厦门大学学报（自然科学版）》2014年第5期704-710,共7页Journal of Xiamen University：Natural Science

基　　金：国家自然科学基金(61176050;61036003;61176092);福建省自然科学基金(2012H0038)

摘　　要：铝诱导晶化(AIC)法是一种低成本、低温制备高质量多晶硅薄膜的方法.采用磁控溅射和自然氧化法在石英衬底上生长铝/三氧化二铝/非晶硅结构的材料,然后进行低温(低于硅铝共熔温度577℃)退火处理.通过共焦显微镜、扫描电子显微镜(SEM)、拉曼光谱(Raman)和X射线衍射(XRD)手段进行表征.结果表明,退火后薄膜分为两层,上层是铝、非晶硅和多晶硅的连续混合膜,随退火时间增加,上层晶化率快速增加;下层形成了完全晶化的大尺寸多晶硅晶粒,晶粒结晶质量接近单晶硅;增加退火时间,下层晶粒增长很缓慢;降低退火温度,下层晶粒尺寸明显增大;形成的多晶硅薄膜均具有高度(111)择优取向.并且,进一步地对上述退火过程中样品的变化行为作出分析.Aluminum induced crystallization（AIC） can be used to prepared polysilicon thin film at low temperature and low cost. The properties of polysilicon thin film induced by A1 film were investigated in this paper. The stack of Al/Al2O3/a-Si was deposited by radio frequency magnetron sputtering on quartz（after deposition of Al film, the sample was exposed to air for 24 h to form a thin Al2O3 film）, and then annealed at temperature below 577℃. The morphology, crystal quality,and crystal orientation were characterized by confocal scanning laser microscopy, scanning electron microscope（SEM）, raman scattering spectroscopy,and X-ray diffraction （XRD） analysis. It turned out that highly （111） oriented polysilicon thin film with bilayer structure was formed by annealing of the stack of quartz/Al/Al2O3/a-Si. The upper layer was continuous and crystallized partly after removing Al content. However, the lower layer was composed of large grains which were crystallized completely with high quality similar to silicon. Annealing time and temperature were important factors of AIC process. The crystallization rate of the upper layer increased rapidly with increasing annealing time,while the lower layer grain size is almost constant. The lower annealing temperature was, the larger grain size of the lower layer was. Then the upper layer and the lower layer behaviors on annealing were explained.

关 键 词：铝诱导晶化 双层结构 择优取向 

分 类 号：O782[理学—晶体学] TB34[一般工业技术—材料科学与工程]