Pr掺杂CdS薄膜的制备及其光电性能研究  

Preparation and Photoelectric Performance Study of Rare Earth Pr Doped CdS Thin Films

作　　者：邹凯[1,2] 李蓉萍[1,2] 刘永生[1,2] 田磊[1] 冯松[1] 

机构地区：[1]内蒙古大学物理科学与技术学院,内蒙古呼和浩特010021 [2]内蒙古自治区高等学校半导体光伏技术重点实验室,内蒙古呼和浩特010021

出　　处：《稀土》2014年第4期62-66,共5页Chinese Rare Earths

基　　金：内蒙古自治区教育厅项目(NJ09006)

摘　　要：结合化学水浴法和真空电子束热蒸发法在玻璃衬底上制备了含有不同厚度Pr掺杂层的CdS多晶薄膜,并对薄膜的结构、表面形貌和光电特性进行了研究。结果表明,未掺杂的CdS薄膜为沿[111]晶向择优生长的立方相闪锌矿结构,导电类型为N型。Pr掺杂并未改变CdS薄膜的物相结构和择优取向,但衍射峰强度增加;掺Pr后CdS薄膜的晶粒尺寸增大,致密性提高,并且薄膜在可见光范围内的透过率增加,光学带隙变大。同时还发现CdS中掺Pr后影响了薄膜的电学性能,掺杂浓度较低时CdS薄膜电阻率增大,掺杂浓度较高时薄膜的电阻率降低并且导电类型由N型转变为P型。CdS thin films contained different thickness of Pr layer were prepared on glass substrates by using the chemical bath deposition （CBD） and vacuum electron beam evaporation method. The structure, surface morphology and photoelectric properties of the films were studied. The results show that un-doped CdS thin film is the cubic phase structure and preferentially orients in the （ 111 ） direction. It is an N type semiconductor. Pr-doping does not change the crystal structure of CdS. It is still preferentially grown along the （ 111 ） crystal direction, and the intensity of the diffraction peak increases. Furthermore, Pr-doping results in a wider band gap and an increasing of transmittance in the range of visible light. At the same time, rare earth Pr layer doped in CdS affects the electrical performances of CdS films. When doped with a lower concentration, the resistivity of the films increases, but a higher doping concentration leads to a reducing of resistivity and a change of conductivity from N to P type.

关 键 词：CDS薄膜 Pr掺杂 化学水浴法 光学特性 

分 类 号：O472[理学—半导体物理] O484.4[理学—物理]