分子束外延InSb薄膜缺陷分析  

Analysis of defects on InSb film grown by MBE

作　　者：周朋[1] 刘铭[1] 邢伟荣[1] 尚林涛[1] 巩锋[1] 

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2014年第9期1007-1010,共4页Laser & Infrared

摘　　要：实现高温工作已经成为了第三代红外探测器的重要发展方向。为了达到这个目标,首先要降低探测器材料的各种缺陷。本文主要研究了不同生长条件对InSb分子束外延薄膜的晶体质量的影响,并采用金相显微镜、X射线双晶衍射仪、扫描电子显微镜及X射线能谱仪等检测手段对外延膜缺陷进行了研究,综合分析了各缺陷的特征、起因、消除方法等。通过优化外延条件,外延膜宏观生长缺陷最低值达到483 cm-2。High operating temperature detector has become a significant direction of the 3rd generation infrared detec-tors.In order to achieve this aim,defects on the detector materials must be reduced.In this paper,the effect of differ-ent experimental conditions on InSb wafers grown by molecular beam epitaxy is studied,metallographic microscope, scanning electron microscope and X-ray double crystal diffraction are used to study the defects.The characteristics,o-rigination and eliminating methods of these defects are analyzed.By MBE optimization,the best defect density has reached 483 cm -2.

关 键 词：INSB 缺陷 MBE 薄膜材料 

分 类 号：TN214[电子电信—物理电子学]