静电对GaN基高压LED特性的影响  

Effects of Electrostatic-Discharge on GaN-Based High Voltage Light-Emitting Diode

作　　者：韩禹[1] 郭伟玲[1] 樊星[1] 俞鑫[1] 白俊雪[1] 

机构地区：[1]北京工业大学光电子技术省部共建教育部重点实验室,北京100124

出　　处：《光子学报》2014年第8期43-48,共6页Acta Photonica Sinica

基　　金：国家科技支撑计划(No.2011BAE01B14);国家自然科学基金(No.61107026)资助

摘　　要：对GaN基绿光高压LED分别施加-500、-1 000、-2 000、-3 000、-4 000、-5 000和-6 000V的反向人体模式静电打击,每次静电打击后,测量样品的I-V特性曲线及光通量等参量,研究静电打击对GaN基高压LED器件性能的影响.结果表明:当样品经过-500,-1 000、-2 000、-3 000和-4 000V的静电打击后,由于LED器件内部产生了缺陷,发生了软击穿并且反向漏电流明显增加,但光通量的变化不明显;当经过-5 000V和-6 000V的静电打击后,由于发生了热模式击穿,温度迅速升高,在结区形成熔融通道,使LED的光通量明显减小,甚至衰减到未打击时的一半;在经受-6 000V的静电打击后,正向电压的减小和反向漏电流的增加更加明显,漏电现象更加明显,严重影响了器件的性能,最终使LED样品失效.GaN-based high-voltage green light-emitting diodes were biased by negative Human-Body-Mode electrostatic discharge （ESD） with --500,--1 000,--2 000,--3 000,--4 000,--5 000 and --6 000 V. The I-V characteristic and luminous flux under different electrostatic shock voltages were comparative analyzed after each shock. The results show that the LED has a soft breakdown which accompanied with apparent increased reverse leakage current and unapparent luminous flux change , which due to the generation of defect after ESD stressing at -- 500, -- 1 000, -- 2 000, -- 3 000 and -- 4 000V~ When the device was biased to --5 000 V and --6 000 V,a sharp decrease of luminous flux appears,even decay to 50% of light output than before stressing. And forward voltage and reverse leakage current show a large degree of decrease and increase respectively after ESD shock of-6000V, which is due to the thermal model breakdown at this moment. The thermal model breakdown make temperature rise rapidly and form a melting channel, which disabled the LED eventually.

关 键 词：GAN 高压LED 静电放电 失效机理 光电特性 

分 类 号：TN873.91[电子电信—信息与通信工程]