AlGaN p-i-n型日盲紫外探测器  

AlGaN p-i-n solar-blind ultraviolet photodetector

作　　者：杨莲红[1] 张保花[1] 王俊珺[1] 魏伟[1] 

机构地区：[1]昌吉学院物理系,新疆昌吉831100

出　　处：《高师理科学刊》2014年第5期51-54,共4页Journal of Science of Teachers＇College and University

基　　金：昌吉学院院级课题(2011YJYB001;2011YJB006);昌吉学院重点建设学科项目(昌院校发〔2012〕92号)

摘　　要：基于在双面抛光的蓝宝石衬底上采用等离子体增强的分子束外延方法生长了AlGaN基p-Al0.45Ga0.55N/i-Al0.35Ga0.65N/n-Al0.45Ga0.55N结构材料,p型欧姆接触采用电子束蒸发Ni/Au(5 nm/5nm)薄层叉指结构电极,制作了p-i-n型AlGaN日盲紫外探测器.器件的峰值响应波长为273 nm.器件在零偏压下的暗电流很小,为nA量级,峰值响应度为8.5mA/W.器件在-5 V偏压下,峰值响应率32.5 mA/W,对应的外量子效率达到15%.A kind of solar-blind ultraviolet p-i-n photodetector was designed and fabricated used A1GaN material grown on sapphire substrate by plasma enhanced molecular beam epitaxy method. The material structure is p-Al0.45Ga0.55N/i-Al0.35Ga0.65N/n-Al0.45Ga0.55N based-on A1GaN. P type ohmic contact is Ni/Au（ 5 nm/5 nm ）interdigital electrode to the structure by electron beam evaporation. The peak response of the device occurs at 273 nm. Under zero bias, a dark current is very small with the order of magnitude nA, and a responsivity of 8.5 mA/W. Under -5 V bias, the responsivity reaches to 32.5 mA/W, corresponding to an external quantum efficiency of 15%.

关 键 词：紫外探测器 ALGAN 日盲 响应度 

分 类 号：TN23[电子电信—物理电子学]