一种低压分段线性曲率校正CMOS带隙基准源设计  

Design of a Low Supply Piecewise Curvature Corrected CMOS Bandgap Reference

作　　者：陈涛[1] 胡利志[1] 乔明[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《电子与封装》2014年第9期36-39,共4页Electronics & Packaging

摘　　要：在传统低压带隙基准的基础上,通过设计与热力学温度成正比的电流（IPTAT）及与热力学温度呈互补关系的电流（ICTAT）,实现节点电流相减,从而产生分段线性电流作为基准源的曲率校正分量,设计了一个性能更佳的曲率校正带隙基准。电路采用低压运放及低压PTAT电流产生模块,工作电压低。Cadence仿真结果显示,在-40~125℃温度范围内,平均温度系数大约3×10^-6℃-1,最低工作电压在1 V左右,可用于低电源电压、高精度的集成芯片。Based on the traditional low supply voltage bandgap reference, by designing current proportional to absolute temperature （IPTAT） and current complementary to absolute temperature （ICTAT） which are subtracted from one another, a piecewise linear current is achieved and used as the curvature correction component. Thus, a better performance curvature corrected bandgap reference is proposed. The circuits use low-voltage amplifier and low-voltage IPTAT generator, so the operation voltage is low. Simulation results with Cadence indicate that the bandgap reference has an average temperature coefficient of 3 - 10 6 ℃^-1 within a temperaVare range between -40-125 ℃ centigrade, and the power supply is as low as 1 V, the circuits can be used in low power supply and high-precision SOCs.

关 键 词：带隙基准 曲率校正 温度系数 

分 类 号：TN432[电子电信—微电子学与固体电子学]