基于CVD自组装生长氧化锌半导体纳米结构的光电导紫外探测器研究  

Study on Photoconductive UV Detector Based on Nanostructures ZnO Semiconductor by Self-assembly Growth

作　　者：刘晗[1] 赵小龙[1] 彭文博[1] 贺永宁[1] 

机构地区：[1]西安交通大学电子与信息工程学院,西安710049

出　　处：《人工晶体学报》2014年第8期1901-1905,共5页Journal of Synthetic Crystals

基　　金：中央高校基本科研业务费专项资金(xkjc2014011)

摘　　要：报道了一种基于自组装生长ZnO纳米结构的光电导型紫外探测器。首先,在石英衬底上制备银叉指电极,然后溅射ZnO纳米薄膜形成一种共面光电导型金属-半导体-金属(MSM)结构,再利用低压CVD生长方法进行ZnO纳米线的原位生长,从而在器件顶部形成了ZnO纳米线垂直阵列和其上交错排列ZnO纳米线所构成的双层ZnO纳米线结构。这种器件底部的ZnO薄膜既是MSM光电导器件的电荷传输层,也同时作为上层ZnO纳米结构自组装生长的籽晶层,顶部的ZnO纳米结构层作为紫外光敏感层,测试结果表明该器件具有光响应速度快、光响应电流大和良好的紫外响应可分辨特性。研究表明,相比于单根ZnO纳米线光电导紫外器件而言,基于ZnO纳米结构膜层的光电导紫外探测器能够大幅度提高可测光响应电流。A photoconductive UV detector based on nanostructure by self-assembly growth were reported using metal-semiconductor-metal（MSM） structure,consisting of ZnO nanowire array as outer-layer photo absorber supported by a ZnO nanocrystalline film. The ZnO film is bridged between two electrically interdigitated silver electrodes for collecting photo-generated charges. Different from previous approaches,in which nanowires were directly connected with two metal electrodes,our MSM structure allows direct exposure of dense ZnO nanowires to UV light. The self-assembly grown ZnO nanowire film using the ZnO nanocrystalline film as seed layer was realized on the quartz substrate by low pressure CVD method. The photoluminescence（ PL） of the grown ZnO nanostructure and the photoresponse characteristics for the fabricated UV detector were measured and analyzed. The detector based on nanostructured ZnO film shows much larger photocurrent than that of the detector using single ZnO nanowire.

关 键 词：氧化锌纳米结构膜 自组装 紫外探测 

分 类 号：TN304[电子电信—物理电子学]