CuGaSe_2∶Ge中间带半导体材料的制备  

Preparation of Intermediate Band Semiconductor Materials CuGaSe_2∶ Ge

作　　者：郑平平[1] 丁铁柱[1] 康振锋 刘文德[1] 李强[1] 肖玲玲[1] 

机构地区：[1]内蒙古大学物理科学与技术学院,内蒙古半导体光伏技术重点实验室,呼和浩特010021

出　　处：《人工晶体学报》2014年第8期1921-1925,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(11264025);内蒙古自治区重大基础研究开放课题(20130902)

摘　　要：采用脉冲激光沉积(PLD)法在钠钙玻璃衬底上制备了CuGaSe2∶Ge薄膜。采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)对CuGaSe2∶Ge薄膜的晶体结构和表面形貌进行了表征,采用紫外-可见分光光度计分析了CuGaSe2∶Ge薄膜的光吸收、反射和透射特性。结果表明,在CuGaSe2中掺IV族元素Ge,价带到中间带和中间带到导带的光子吸收能量分别为0.89 eV和0.71 eV,禁带宽度为1.60 eV,能够形成中间带。The CuGaSe2∶ Ge film were prepared on soda-lime glass substrates by pulse laser deposition（PLD） method. The crystal structure and film surface morphology were characterized by X ray diffraction（XRD）,Scanning Electron Microscopy（SEM）. The light absorption,reflection and transmission characteristics were analyzed by UV-visible spectrophotometer. The results show that the dope of group IV atom Ge in CuGaSe2,the photon absorption energy were 0.89 eV and 0.71 eV,the optical band gap is 1.60 eV and capable of forming the intermediate band.

关 键 词：脉冲激光沉积 CuGaSe2∶Ge薄膜 中间带 禁带宽度 

分 类 号：TN304[电子电信—物理电子学]