基于0.18μm CMOS工艺的低噪声放大器设计  

A low noise amplifier design based on 0.18 μm CMOS technology

作　　者：计雷雷[1] 王江 郑宏兴[1] 张玉贤[1] 

机构地区：[1]天津职业技术师范大学天线与微波技术研究所,天津300222 [2]陕西千山航空电子有限责任公司,西安710061

出　　处：《天津职业技术师范大学学报》2014年第3期8-11,共4页Journal of Tianjin University of Technology and Education

基　　金：国家自然科学基金项目(61371043);天津市应用基础及前沿技术研究计划(12JCYBJC10500)

摘　　要：为了提高接收机的性能,基于台积电公司0.18μm CMOS工艺设计了低噪声放大器。从晶体管模型出发,分析了阻抗匹配,采用源端负反馈和提高输入匹配的电感Q值来降低噪声。通过电路的共源共栅结构搭配电路,消除密勒电容,提高电路性能。To increase properties of receiver, a low noise amplifier is designed based on Taiwan Semiconductor Manufacturing Company Limited 0.18 μm CMOS technology. Starting with transistor model, we analyze the impedance matching. Noise has been decreased by using source negative feedback and improving Q-factor of input matched inductance. The miller capacitance can be eliminated by using collocating source and grid structure. Circuit performance has been improved.

关 键 词：CMOS 反馈 共源共栅 低噪声放大器 

分 类 号：TN722.3[电子电信—电路与系统]