JBS结构肖特基整流器  

Study on JBS Structure Schottky Rectifier

作　　者：唐冬[1] 刘旸[1] 徐衡[1] 

机构地区：[1]中国电子科技集团公司第四十七研究所,沈阳110032

出　　处：《微处理机》2014年第5期11-13,共3页Microprocessors

摘　　要：介绍了结势垒控制肖特基整流管(Junction-Barrier-controlled Schottky-Rectifier,JBS)的结构原理,论述了JBS结构肖特基整流器的正向特性和反向特性,通过对扩散掩膜尺寸m和扩散P+区时窗口宽度S的工艺模拟,归纳出m、s变化对器件参数正向压降和反向漏电流密度的影响。并通过实际产品进行验证,得出JBS结构肖特基整流器漏电流小的特点,利于功率肖特基二极管得到更广泛的应用。This paper introduces the structure principle of Junction-Barrier-controlled Schottky-Rectifier(JBS)and discusses the forward and reverse characteristics of schottky rectifier in JBS structure. By process simulation for diffusion mask size (m)and p+zone window width (s),the effects on the forward voltage drop and reverse leakage current density,performed by the change of m and s device parameter,are described.The product is verified that the characteristics of schottky rectifier in JBS structure with low current leakage are concluded,so the power SBD can be used widely.

关 键 词：结势垒控制肖特基整流管 正向压降 反向漏电流密度 

分 类 号：TN4[电子电信—微电子学与固体电子学]