AlN/蓝宝石模板上生长的Al_(0.6)Ga_(0.4)N薄膜结构与光学性能研究  

A study on structural and optical properties of Al_(0.6)Ga_(0.4)N films grown on AlN/sapphire templates

作　　者：王君君[1] 刘宁炀 张康[1] 张志清[1] 赵维[1] 范广涵[1] 张娜[1] 陈志涛[1] 

机构地区：[1]广东省工业技术研究院(广州有色金属研究院),广东广州510650

出　　处：《材料研究与应用》2014年第3期169-172,共4页Materials Research and Application

基　　金：广东省战略性新兴产业LED专项(项目编号2010A081001001;2011A081301003;2012A080301003;2012A080302002);广州市应用基础研究项目(编号2013J4100014)

摘　　要：采用MOCVD方法在AlN/蓝宝石模板上生长高铝组分Al0.6Ga0.4N薄膜,并采用高分辨率XRD(HRXRD)及阴极荧光(CL)方法对其进行了表征.结果表明,AlGaN薄膜产生了相分离,其原因为厚膜中的应力弛豫及Al原子低的表面迁移率.In this work ,Al0.6Ga0.4N films grown on AlN/sapphire templates by metalorganic chemical va-por deposition （MOCVD） system were characterized by high resolution XRD and low temperature cath-odoluminescence （CL ） methods .It’s found that there exists phase separation phenomenon in the films by XRD measurements .The optical properties obtained from CL spectra confirmed this phenomenon further . The generation of phase separation is attributed to stress relaxation in thick films and the low surface mob-ility of Al atoms .

关 键 词：相分离 AlN/蓝宝石模板 AL 0.6Ga0.4N 

分 类 号：TN304.2[电子电信—物理电子学]