立方氮化硼薄膜的制备及研究  

Synthesis and Characterization of Cubic Boron Nitride Thin Films

作　　者：王明娥[1] 马国佳[1,2] 董闯[1] 

机构地区：[1]大连理工大学材料科学与工程学院,大连116024 [2]北京航空制造工程研究所高能束流加工技术重点实验室,北京100024

出　　处：《真空科学与技术学报》2014年第9期950-955,共6页Chinese Journal of Vacuum Science and Technology

摘　　要：通过工艺对比,考察了过渡层在降低立方氮化硼薄膜内应力方面的作用,并研究了薄膜的力学性能。结果表明B-C-N三元过渡层的添加有效地降低了薄膜内应力。X射线光电子能谱结果显示在B-C-N三元过渡层内形成了成分的逐渐变化,同时各元素间杂化成键。过渡层的添加使得在硅片基底上成功制备了性能稳定的立方氮化硼厚膜。The cubic boron nitride（c-BN）thin films were synthesizedby reactive RF rrkagnetron sputtering on the Si substmte pre-coated with sputtered B-C-N ternary interlayer. The impacts of the deposition variables, including the B-C-N interlayer, sputtering power, and pressure, on the stress distribution of the C-BN films were investigated. The microstrue- tures and mechanical properties of the c-BN films were characterized with X-ray photoelectron spectroscopy（XPS）, Fourier transform infrared spectroscopy, atomic force microscopy, and conventional mechanical probes. The results show that the B- C-N interlayer considerably decreased the internal stress in e-BN films, possibly because the contents gradient, and forma- tion of hybrid bonds at the interlayer may release some stress. Under the optimized conditions, the stable c-BN film, with a nano-hardness up to 42 GPa and a thickness of 1.8μn,was deposited.

关 键 词：立方氮化硼薄膜 B-C-N过渡层 应力 X射线光电子能谱 

分 类 号：O539[理学—等离子体物理]