4H-SiC ICP深刻蚀工艺研究  

Research on ICP deep etching process of 4H-SiC

作　　者：喻兰芳[1,2] 梁庭[1,2] 熊继军[1,2] 崔海波[1,2] 刘雨涛[1,2] 张瑞[1,2] 

机构地区：[1]中北大学仪器科学与动态测试教育部重点实验室,山西太原030051 [2]中北大学电子测试技术国防科技重点实验室,山西太原030051

出　　处：《传感器与微系统》2014年第10期8-10,共3页Transducer and Microsystem Technologies

基　　金：国家自然科学基金资助项目(51075375);国家重点基础研究计划("973")资助项目(2010CB334703)

摘　　要：SiC是一种新型的半导体材料,由于化学性质十分稳定,目前还未发现有哪种酸或碱能在室温下对其起腐蚀作用,因此,在SiC的加工工艺中常采用干法刻蚀。采用GSE 200plus刻蚀机对SiC进行刻蚀,研究了刻蚀气体、源功率RF1、射频功率RF2及腔室压强对刻蚀结果的影响,并对产生的结果进行了相关分析。提出了一种SiC ICP深刻蚀方法,对SiC深刻蚀技术具有重要的指导意义。SiC is a new type semiconductor material, because of its stable chemical properties, any acid or alkali which can corrode it at room temperature have not be found, so dry etching is often used in SiC machining. GSE 200 plus etching machine is used to etch SiC, influence of etching gas, source power RF1, radiofrequency power RF2 and chamber pressure on etching result are studied, relative analysis of generated results is carried out. A SiC ICP deep etching method is proposed, which has an important guiding significance on SiC deep etching technique.

关 键 词：SIC ICP深刻蚀 刻蚀气体 源功率RF1 射频功率RF2 腔室压强 

分 类 号：TN212[电子电信—物理电子学]