金掺杂碲镉汞外延材料生长及拉曼光谱研究  

Growth and Raman spectrum of Au-doped Hg_(1-x)Cd_xTe epitaxial crystals

作　　者：王仍[1] 焦翠灵[1] 徐国庆[1] 陆液[1] 张可峰[1] 杜云辰[1] 李向阳[1] 张莉萍[1] 邵秀华[1] 林杏潮[1] 

机构地区：[1]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083

出　　处：《红外与激光工程》2014年第9期3046-3050,共5页Infrared and Laser Engineering

基　　金：国家自然科学基金(11304335);中国科学院三期创新项目(Q-ZY-87/Q-ZY-88)

摘　　要：采用气相外延技术生长金掺杂的Hg1-xCdxTe薄膜材料,通过高低温退火工艺有效控制p型Hg1-xCdxTe材料的电学参数,利用傅里叶光谱仪、金相显微镜以及拉曼光谱技术对薄膜材料进行表征。通过常规光伏器件的制作工艺,利用金掺杂材料初步研制了短波器件,器件性能较好黑体DλP*可达4.67E+11/(cmHz1/2W-1)。Au-doped Hg1 -xCdxTe crystals were grown by vapor phase epitaxial method. The optical properties of Hg1 -xCdxTe crystals were investigated by using Fourier transform infrared spectroscopy and Raman spectroscopy. Moreover, the surface of Hg1 -xCdxTe epitaxial materials were observed by metallographic microscopy. Based on traditional photovoltaic technique, the shot-wavelength detectors were made by Au-doped Hg1-xCdxTe film materials. Performances of the detectors were favorable. The background-limited detective was 4.67E＋11/（cmHz1/2W-1）.

关 键 词：气相外延 Hg1-xCdxTe晶体 拉曼光谱 

分 类 号：O787.7[理学—晶体学]