一种新型低成本的单晶硅表面织构化方法的研究  

A new low cost texturization investigation of monocrystalline silicon with sodium phosphate

作　　者：刘德雄[1,2] 张定[1] 李晓红[1] 李同彩[1] 

机构地区：[1]西南科技大学理学院新能源技术与应用研究所,绵阳621010 [2]中国科学技术大学国家微尺度物质科学实验室,合肥230026

出　　处：《四川大学学报（自然科学版）》2014年第5期1023-1028,共6页Journal of Sichuan University(Natural Science Edition)

基　　金：国家自然科学基金(11204250);西南科技大学青年基金项目(12zx3102)

摘　　要：为了增加单晶硅太阳电池的光谱吸收,提高太阳能电池的光电转换效率,用一种新型的腐蚀剂磷酸钠对单晶硅表面进行织构化研究,分析腐蚀液的浓度、反应时间、反应温度对制备单晶硅太阳能电池绒面的影响,并研究添加剂异丙醇(IPA)对磷酸钠(Na3PO4·12H2O)制绒效果的影响.当磷酸钠的浓度为13%wt,反应温度为85℃,反应时间为25min时能制备出金字塔大小均匀、覆盖致密的绒面,并在400-800nm光谱范围内获得最低反射率12.41%.适量的添加IPA有助于制绒效果的改善,可以使反射率更低.此制绒方法重复性好、价格低廉,是一种很有前景的制绒方法,可以进行大面积生产.A new alkaline etchant of sodium phosphate tribasic （Na3PO4 · 12H2O） solution was applied to texture monocrystalline silicon for improving light absorption and photoelectric conversion efficiency of solar cells. The concentration of etchants, etching time and temperature were researched for the tex- turization effect. Uniform compact pyramid texturization in the wafers of monocrystalline silicon is formed with 13~wt sodium phosphate tribasic at 85 ＊C for 25 min. Under the optimized conditions, the lower average reflectivity of 12.41% has been obtained. The addition of fit concentration IPA can im- prove etching effect and acquire better texturization. This texturization process is promising on account of the possibility of the large scale production.

关 键 词：单晶硅 反射率 湿法腐蚀 磷酸钠 绒面 

分 类 号：TN1[电子电信—物理电子学]