微波氮化硅陶瓷高温介电性能建模研究  

Dieletric Properties Modeling Studies of Silicon Nitride Ceramic in High Temperature

作　　者：钟汶帆 吴孟强[1] 

机构地区：[1]电子科技大学微固学院电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《压电与声光》2014年第5期857-860,共4页Piezoelectrics & Acoustooptics

基　　金：四川省青年基金资助项目(No.JS0303001)

摘　　要：通过电介质物理和数学方法,对氮化硅陶瓷的极化机制进行了研究,将氮化硅介电常数看作是电子位移极化、离子位移极化及热离子极化3个部分的贡献总和,且成功解释了α-Si3N4和β-Si3N4间的介电常数差。研究发现,在微波条件下,介电损耗主要来源于弛豫损耗及电导损耗,分析了其在不同温度段的主要作用,且计算了介电常数温度系数。通过一些微观参数建立了氮化硅介电常数及介电损耗随温度的变化关系和影响因素模型,与实验值符合较好。In this paper, the polarization mechanism of the silicon nitride ceramics are studied by using dielectric physics and mathematical methods. The contribution to the dielectric constant of silicon rdtride is divided into elec tronic displacement polarization,ionic polarization and thermal ion polarization,and explain the gap of dielectric constant between the α-Si3N4 and β-Si3N4. Understanding the dielectric loss is produced by relaxation loss and conductivity loss, then analyzing main function they played in different temperature, calculate dielectric constant temperature coefficient. Finally,modeling the influence factors and changes with temperature of the dielectric constant and dielectric loss which can fit the experiment data well.

关 键 词：介电常数 介电损耗 氮化硅 高温 温度系数 

分 类 号：TQ174.1[化学工程—陶瓷工业]