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机构地区:[1]中国空间技术研究院西安分院,西安710000
出 处:《空间电子技术》2014年第3期1-6,共6页Space Electronic Technology
摘 要:文章研究了两种可应用于毫米波频段的LTCC微带到带状线的过渡结构,包括一种微带到带状线的垂直过渡和一种微带到带状线的同层过渡。利用三维电磁场仿真软件对这两种互连过渡结构进行仿真和优化,仿真结果表明在25GHz^40GHz的工作频带内微带到带状线垂直过渡的回波损耗大于22dB,在35GHz内端到端插损优于0.5dB,40GHz内插损优于1dB;微带到带状线同层过渡的回波损耗大于32dB,40GHz内端到端插损优于0.5dB。测试结果表明,在40GHz内两种过渡结构的性能优良,能很好地满足工程应用的要求。This paper presents two transitions between microstrip and stripline with Low Temperature Co-fired Ceramic technology,including a vertical transition and a coplanar transition for millimeter-wave applications.These interconnects are simulated and optimized by three-dimensional electromagnetic filed simulator.Simulation results show that the return loss of microstrip to stripline vertical transition is less than-22dB,and insertion losses is better than 0.5dB up to 35GHz,and better than 1 dB up to 40GHz.Similarly,the return loss of the coplanar transition is less than-32dB and insertion loss is better than 0.5dB.LTCC test structures are fabricated and the performance of both transitions is successfully validated by scattering parameter measurements up to 40GHz.
分 类 号:TN405[电子电信—微电子学与固体电子学]
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