低功耗宽带CMOS低噪声放大器  

Low-Power Consumption Broadband CMOS Low Noise Amplifier

作　　者：邵翔鹏[1] 张万荣 丁春宝[1] 张卿远[1] 高栋[1] 周孟龙[1] 鲁东[1] 霍文娟[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《电子器件》2014年第5期908-911,共4页Chinese Journal of Electron Devices

基　　金：国家自然基金项目(60776051);北京市自然基金项目(4142007;4143059)

摘　　要：实现了一款低功耗的宽带低噪声放大器(LNA)。该低噪声放大器由三级电路组成,由于每一级都采用了电流复用技术,显著地降低了功耗。在电路中产生负零点来抵消极点,提高增益平坦度。低Q值电路拓展带宽。经0.18μm TSMC CMOS工艺仿真验证,在3 V的电源电压下,功耗仅为4.89 mW。另外在1 GHz^4.5 GHz频带范围内,电压增益(S21)为(14.8±0.4)dB,噪声系数(NF)介于3.1 dB^4.2 dB之间,输入、输出反射系数(S11、S22)均小于-10 dB。在4 GHz时,输入三阶交调点(IIP3)达到-11 dBm。结果表明该LNA性能良好。A low-power broadband low noise amplifier （LNA）was demonstrated. The LNA is composed of three stages, by utilizing current reuse configuration at each stage of the amplifier, power consumption decreases noticeably. Negative zero is generated in the circuit to cancel the negative pole and improve gain flatness. It has broadened the band with the use of the low Q value circuit. Verified by 0.18 μm standard CMOS process,this LNA consumes only 4.89mW with a 3 V power supply. In addition, over the 1 GHz - 4.5 GHz band, voltage gain （ S21 ） maintains 14.8 dB＋0.4 dB, noise figure（NF） swings from 3. 1 dB to 4.2 dB, input reflection （S11 ） and output reflection （S22） are less than - 10 dB. The value of input intercept point （ IIP3 ） is - 11 dBm at 4 GHz. The results suggest that performance of the LNA is favorable.

关 键 词：低噪声放大器 低功耗 电流复用 CMOS 

分 类 号：TN929.11[电子电信—通信与信息系统]