基于90nm CMOS工艺的超宽带分布式混频器设计  

Design of the Ultrawide-Band Distributed Mixer Using 90 nm CMOS Technology

作　　者：谢仁贵[1] 王维波[1] 陶洪琪[1] 张斌[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《半导体技术》2014年第11期808-811,860,共5页Semiconductor Technology

摘　　要：摘要：基于TSMC 90nm CMOS工艺设计了一款18～100GHz的超宽带无源漏极混频器，混频器采用了均匀分布式结构，通过牺牲延迟来获得超宽带带宽。同时，提出了一种栅极电压优化技术，通过优化偏置电压Vcs来最小化CMOS混频器的传输损耗。混频器带宽为18—100GHz，带宽内变频损耗为（4±1）dB，端口隔离度优于15dB，45GHz处1dB压缩点输入功率为4dBm，芯片面积仅为0．36mm^2该混频器在低功耗的环境下具有良好的变频损耗性能，非常适合用在低功耗的通信系统当中。A broadband 18-100 GHz passive distributed drain-pumped mixer using TSMC 90 nm CMOS technology was presented. To achieve broad bandwidth for the mixer, a uniform distributed topology was introduced. To minimize the transmission loss of the drain mixer, a gate bias optimization method was proposed. The drain-pumped mixer exhibits a low and flat conversion loss of （4±1 ） dB from 18 GHz to 100 GHz with a compact size of 0.36 mm^2. The isolation is better than 15 dB. An input power at 1 dB compression point is 4 dBm at 45 GHz. The mixer has the good performace of frequency conversion loss with the low power consumption. The mixer is suitable for low power-consuming communication system.

关 键 词：分布式 漏极 无源 超宽带 低功耗 

分 类 号：TN43[电子电信—微电子学与固体电子学]