基于平面GaAs肖特基二极管的220 GHz倍频器  

A 220 GHz Frequency Doubler Based on GaAs Planar Schottky-Barrier Diodes

作　　者：杨大宝[1] 王俊龙[1] 邢东[2] 梁士雄[2] 张立森[2] 冯志红[2,3] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]专用集成电路重点实验室,石家庄050051 [3]中国电子科技集团公司第十二研究所,北京100016

出　　处：《半导体技术》2014年第11期826-830,共5页Semiconductor Technology

摘　　要：设计和制造了一种高效高功率的220GHz倍频器，倍频器的有源器件是一只反向串联二极管芯片，它是由四个平面GaAs肖特基二极管通过线性阵列方式集成到一块芯片上。使用ADS和HFSS软件相结合的方法对220GHz倍频器的进行了仿真优化，首先利用HFSS三维电磁仿真准确建立二极管和波导的结构模型，再利用ADS线性和非线性谐波电路仿真来优化倍频电路的性能。在210～230GHz的频带范围内，220GHz倍频器在20mW固定功率输入条件下测试，功率输出大于0．5mw；在100mw固定功率注入时，整个20GHz频带范围内功率输出大于2．1mW，在214GHz处输出峰值功率5mW，效率为5％。反向串联二极管单片上的二极管采用的是并联布局放置方式，这种方式将二极管产生的热量从二极管直接传导到波导腔体的金属导体壁上，利于散热。220GHz倍频器的研制成功，证明了国产平面封装GaAs肖特基二极管的毫米波频段的应用能力，其研制方法对将来更高频率的电路设计具有借鉴意义。The high-power and high-efficiency frequency doubler to the 220 GHz was designed and fabricated. The active device is a single GaAs chip comprised a linear array of four planar Schottky-barrier diodes, called anti-series diodes. The design method combines Agilent ADS linear/non-linear harmonic balance circuit simulation to optimize the performance of the circuit, with Ansoft HFSS 3-D EM simula- tion to accurately model the diode geometry and waveguide structure. Test data for the 220 GHz doubler show more than 0.5 mW output power when the fixed input power is 20 mW, and output power of more than 2.1 mW when the fixed input power is 100 mW over a 20 GHz band from 210 GHz to 230 GHz, and the peak power at 214 GHz reaches 5 mW with 5% efficiency. The parallel diodes arrangement pro- vides an improved thermal path for heat flow from the diodes to metal waveguide block. The results prove that the diodes can be used in the millimeter wave band and the design idea of the doubler can provide a reference for the future circuit designs with higher frequency.

关 键 词：220 GHZ 毫米波 肖特基势垒二极管 倍频器 效率 

分 类 号：TN315.3[电子电信—物理电子学] TN771