氮化时间对脉冲激光沉积AlN薄膜性能的影响  

Effect of the Nitridation Duration on the Properties of AlN Thin Films Grown by Pulsed Laser Deposition

作　　者：刘作莲[1] 王海燕[1] 杨为家[1] 王文樑[1] 李国强[1,2] 

机构地区：[1]华南理工大学材料科学与工程学院,广州510640 [2]华南理工大学发光材料与器件国家重点实验室,广州510640

出　　处：《半导体技术》2014年第11期836-840,845,共6页Semiconductor Technology

基　　金：国家自然科学基金资助项目(51372001);广东省杰出青年基金资助项目(S2013050013882);广东省战略性新兴产业专项资金LED产业项目(2011A081301012;2011A081301010;2012A080302002);广东省高等学校科技创新重点项目(cxzd1105)

摘　　要：应用脉冲激光沉积(PLD)技术在氮化处理后的蓝宝石衬底上外延生长AlN薄膜。研究了氮化处理时间对AlN薄膜结构性能和表面形貌的影响,利用原位反射式高能电子衍射(RHEED)对生长过程进行实时观测,利用高分辨X射线衍射仪(HRXRD)和扫描电子显微镜(SEM)对AlN薄膜的结构性能以及表面形貌等进行表征和分析。结果表明,随着氮化时间的增加,AlN形核种子数量增加并逐渐有序,促进AlN薄膜由多晶转为单晶并提高其晶体质量,有利于AlN薄膜由三维生长转为二维生长,改善AlN薄膜表面形貌。为采用PLD技术制备高质量AlN基器件提供了一种新思路。The AIN thin films were grown on the nitrided sapphire substrates by pulsed laser deposi- tion （PLD） and the effects of nitridation duration on the structural properties and the surface morpholo- gies of AIN films were investigated. In situ observation of reflection high-energy electron diffraction （RHEED） was used to obverse the epitaxial course in real time. High resolution X-ray diffraction （HRXRD） and scanning electron microscopy （SEM） were used to characterize and analyze the structural properties and surface morphologies of as-grown AIN thin films, respectively. The results show that the expending of nitridation duration enhances the coherence of nucleation and accelerates the AIN epitaxial growth mode transferring from three-dimensional （3D） mode into two-dimensional （2D） mode, and improves the crystalline quality and the surface morphology of AIN thin films ultimately. This provides a new direction for the fabrication of AIN-based devices by PLD.

关 键 词：ALN薄膜 脉冲激光沉积(PLD) 氮化时间 高分辨X射线衍射(HRXRD) 扫 描电子显微镜(SEM) 

分 类 号：TN304.2[电子电信—物理电子学]