典型双极能隙基准源的瞬时电离辐射效应分析  

Analysis of Transient Ionizing Radiation Effects on Classic Bipolar Bandgap Reference Source

作　　者：李瑞宾[1] 林东生[1] 陈伟[1] 王桂珍[1] 杨善潮[1] 白小燕[1] 金晓明[1] 

机构地区：[1]西北核技术研究所强脉冲辐射环境模拟与效应国家重点实验室,西安710024

出　　处：《微电子学》2014年第5期701-704,共4页Microelectronics

摘　　要：分析了典型双极型二管和三管能隙基准源受瞬时电离辐射后的输出响应,以及以双极能隙基准源为基本电路的集成稳压器的瞬时辐射效应,并对含典型三管能隙基准源的集成稳压器L7805芯片进行了瞬时电离辐射实验验证。实验结果表明,基准源受辐射后输出电平降至零电平附近,致使稳压器输出降低,并且电平恢复时间与剂量率成对数关系,与理论分析结果一致。The responses of double-transistor and triple-transistor bandgap reference sources when exposed to transient ionizing radiation, and the radiation effects of integrated voltage stabilizers based on bipolar bandgap reference voltage circuit were analyzed. A type of integrated voltage stabilizers L7805 which contained tripletransistor reference voltage circuit were irradiated. The experimental results showed that reference voltage source＇s output fell to almost zero level when irradiated by X-ray pulse, resulting in L7805＇s output falling, and the voltage recovering duration related to dose rate in logarithm. That was consistent with theoretical analysis.

关 键 词：瞬时电离辐射 能隙基准源 集成稳压器 

分 类 号：TN431[电子电信—微电子学与固体电子学] TN792