Si基IV族光电器件的研究进展(一)—激光器  

Progress in Study of Si-Based Group IV Optoelectronic Devices(Ⅰ)——Lasers

作　　者：刘智[1] 张旭[1] 何超[1] 黄文奇[1] 薛春来[1] 成步文[1] 

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083

出　　处：《激光与光电子学进展》2014年第11期1-9,共9页Laser & Optoelectronics Progress

基　　金：国家973计划(2013CB632103);国家自然科学基金(61036003;61176013;61177038)

摘　　要：Si基光互连具有高速度、高带宽、低功耗、可集成等特点,是解决Si基集成电路发展瓶颈的一个重要途径。在Si基光互连的关键器件中,除了Si基高效光源以外,其他的器件都已经实现。同为IV族元素的Ge具有独特的准直接带隙的能带结构,有望通过能带工程等手段实现高效发光。近年来,Si基IV族发光材料和发光器件有了许多重要进展。回顾了Si基IV族发光材料和发光器件的最新成果,如Si衬底上张应变的Ge、Ge发光二极管及激光器、GeSn发光器件,并对结果进行了讨论。最后展望了Si基IV族激光器的发展趋势。Si- based optical interconnect is an important approach to solve the bottleneck of Si integrated circuits due to its high speed, high bandwidth, low power consumption, and ability to be monolithically integrated on Si. Most of the key devices for Si- based optical interconnect have already been demonstrated,except Si- based light source. In Group IV, Ge has potential application in Si- based light emitting source via proper band engineering and other treatments because of its unique pseudo- direct bandgap structure. During the past years, Si-based emitting materials and light emitters obtained significant developments. We review and summarize the most recent progress in this field, including tensile strain Ge, Ge light emitting diode on Si, Ge laser on Si, and GeSn light emitting diode. Finally, the challenges and opportunities associated with these approaches are discussed.

关 键 词：材料 发光二极管 激光器 张应变 发光 Ge GeSn 

分 类 号：O472[理学—半导体物理] O484[理学—物理]