CO_2气体反应磁控溅射制备Ti-O薄膜成分和结构研究  

On study of composition and structure of Ti-O film prepared by reactive magnetron sputtering using CO_2

作　　者：李娇[1,2] 文峰[1,2] 谢东[3] 潘长江[1] 丁红燕[1] 

机构地区：[1]淮阴工学院江苏省介入医疗器械研究重点实验室,江苏淮安223003 [2]海南大学材料与化工学院材料工程系,热带岛屿资源先进材料教育部重点实验室,海口570228 [3]西南交通大学物理科学与技术学院,成都610031

出　　处：《功能材料》2014年第20期20133-20137,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(51062002);海南省自然科学基金资助项目(511113);江苏省介入医疗器械研究重点实验室开放基金资助项目(jr1415)

摘　　要：室温下采用反应磁控溅射的方法,利用CO2作碳源和氧源制备了碳掺杂Ti-O薄膜。X射线衍射(XRD)、光射线电子能谱(XPS)和拉曼光谱用于表征薄膜的成分和结构。采用紫外-可见(UV-Vis)分光光度计测量了薄膜的吸光度并通过作图计算得到其带隙宽度。结果表明,用CO2作碳源和氧源,可得到C掺杂的Ti-O薄膜。当掺杂碳时,钛氧膜中金红石相特征峰显著减弱,且碳以取代O原子的形式掺杂在薄膜中并促使TiO相的出现。当反应气体为CO2和O2共存时,钛原子优先与氧原子结合并抑制TiO相的形成。碳的掺入能有效降低TiO2带隙宽度,使薄膜的吸收边扩展到可见光区,提高对可见光的吸收。In this paper,carbon-doped Ti-O films were prepared on silicon wafer by reaction magnetron sputtering using CO2 as carbon and oxygen source.The composition and structure of as-prepared Ti-O films were characterized by XRD,XPS and Raman spectra.The thickness of the as-prepared Ti-O films was characterized by profilometer.Ultraviolet-visible（UV-Vis） spectrophotometer was used to record the absorbance of as-prepared Ti-O films,the band gaps of as-prepared Ti-O films have been calculated by plotting too.The results showed that C doped Ti-O films were synthesized successfully using CO2 gas as C and O source and rutile phase in the Ti-O films had a significant decrease after carbon doped and carbon was doped in the Ti-O lattice by the means of carbon substituted for oxygen,and the crystallization of TiO phase was also promoted.When CO2 and O2coexisted as reactive gas,Ti atom was priority to combine with oxygen atom and restrained the formation of TiO phase.Carbon doping could decrease the band-gap of and make the absorption edge extended from UV to visible light region and improved the absorption of visible light.

关 键 词：CO2 Ti-O薄膜 碳掺杂 反应磁控溅射 

分 类 号：TB332[一般工业技术—材料科学与工程]