MLE20/MJD20在甲类功率放大器中的应用  

Application of a New Type of Insulated Gate Field Effect Transistor MLE20/MJD20 in Class A Power Amplifier

作　　者：王东起[1] 

机构地区：[1]中国石油大学胜利学院,山东东营257000

出　　处：《电子科技》2014年第11期120-122,127,共4页Electronic Science and Technology

摘　　要：针对传统甲类功率放大器电路复杂、电路稳定性较差的缺点,设计开发了一种新的基于全对称互补差分放大电路的甲类功率放大器。该放大器采用MLE20/MJD20绝缘栅型场效应管作为电流放大管,通过对差分输入级、电压放大级、功率输出级中各元件参数的合理设计,降低了功率放大器的输出内阻,提高了电路的驱动能力及电路的稳定性。A new class A power amplifier based on symmetric complementary differential amplifier circuit is designed and developed in the view of the shortcomings of traditional class A power amplifier with complex and poor circuit. The new power amplifier reduces the output impedance of the power amplifier and improves the driver power and stability of the circuit by adopting MLE20/MJD20 insulated gate FET as its current amplifier tube and by proper design of the parameters in differential input,the voltage amplification and output.

关 键 词：甲类功率放大器 场效应管 音频放大器 MLE20/MJD20 

分 类 号：TN722.5[电子电信—电路与系统]