Surface roughness of optical quartz substrate by chemical mechanical polishing  

作　　者：段波 周建伟 刘玉岭 孙铭斌 张玉峰 

机构地区：[1]Institute of Microelectronics,Hebei University of Technology

出　　处：《Journal of Semiconductors》2014年第11期168-172,共5页半导体学报（英文版）

基　　金：supported by the Natural Science Foundation of Hebei Province(No.E2013202247);the Science and Technology Plan Project of Hebei Province(Nos.Z2010112,10213936);the Hebei Province Department of Education Fund(No.2011128)

摘　　要：In order to achieve a high-quality quartz glass substrate and to improve the performance of TiO2 antireflection coating, chemical mechanical polishing （CMP） method was used. During CMP process, some process parameters including pressure, polishing head speed, platen speed, slurry flow rate, polishing time, and slurry temperature were optimized to obtain lower quartz surface roughness. According to the experiment results, when pressure was 0.75 psi, polishing head speed was 65 rpm, platen speed was 60 rpm, slurry flow rate 150 mL/min, slurry temperature 20℃, and polishing time was 60 s, the material removal rate （MRR） was 56.8 nm/min and the surface roughness （Ra） was 1.93 A （the scanned area was 10 × 10 μm^2）. These results were suitable for the industrial production requirements.In order to achieve a high-quality quartz glass substrate and to improve the performance of TiO2 antireflection coating, chemical mechanical polishing （CMP） method was used. During CMP process, some process parameters including pressure, polishing head speed, platen speed, slurry flow rate, polishing time, and slurry temperature were optimized to obtain lower quartz surface roughness. According to the experiment results, when pressure was 0.75 psi, polishing head speed was 65 rpm, platen speed was 60 rpm, slurry flow rate 150 mL/min, slurry temperature 20℃, and polishing time was 60 s, the material removal rate （MRR） was 56.8 nm/min and the surface roughness （Ra） was 1.93 A （the scanned area was 10 × 10 μm^2）. These results were suitable for the industrial production requirements.

关 键 词：quartz substrate surface roughness removal rate CMP process parameters 

分 类 号：TN305.2[电子电信—物理电子学] TG84[金属学及工艺—公差测量技术]