背栅单层石墨烯场效应晶体管的构建及可靠性研究  

Study on the construction and reliability of back-gate mono-layer graphene field effect transistor

作　　者：郝威[1,2] 郭新立[1,2] 张艳娟[1] 王蔚妮[1] 张灵敏[1] 王增梅[1] 陈坚[1] 于金[1] 

机构地区：[1]东南大学材料科学与工程学院&江苏省金属高技术重点实验室,南京211189 [2]东南大学一张家港工业技术研究院,江苏张家港215628

出　　处：《功能材料》2015年第1期1022-1026,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(21173041);苏州市纳米技术专项资助项目(ZXG2012029)

摘　　要：采用低压化学气相沉积法(LPCVD)制备了高质量的单层石墨烯薄膜,通过湿法转移将所制备的单层石墨烯无损覆盖到两条平行粘贴在SiO2/Si衬底上的热释放胶带表面,胶带间距约500μm,进而对试样进行加热和切割,获得与SiO2/Si衬底紧密结合的石墨烯条带(约10 000μm×500μm),最后采用掩膜法在石墨烯条带上蒸镀金电极,构建成背栅石墨烯场效应晶体管。该方法简单易行,电学性能测试结果表明,石墨烯与金电极具有良好的欧姆接触,室温下,石墨烯的空穴迁移率约为735cm2/(V·s),且表现出了石墨烯所特有的双极性特征。背栅石墨烯场效应晶体管转移特性曲线表现出了滞回行为,且随着施加栅压的增大,滞回行为越来越显著,展示出高的性能可靠性。High-quality mono-layer graphene films were prepared by use of the technique of low pressure chemi-cal vapor deposition (LPCVD).The as-prepared graphene was used to construct a back-gate mono-layer gra-phene field effect transistor by a simple process i.e.:The as-prepared mono-layer graphene was firstly trans-ferred onto the surface area of SiO2/Si substrate covered with two parallel arranged heat release tapes with a gap distance about 500μm.The graphene strip(about 10 000μm×500μm)closely combined with the SiO2/Si sub-strate was obtained by heating and cutting.Finally,the Au electrodes were deposited on the surface of graphene strip by use a mask.The results of electrical properties measurements showed that the graphene strip was in good ohm contact with Au electrodes.The hole mobility of graphene was up to 735 cm2/(V??s)at room tem-perature and the graphene exhibited an unique bipolar characteristic.The hysteresis behaviors in the transfer characteristics curves of back-gate mono-layer graphene field effect transistors were observed and become more obvious with the increase of gate voltage,which exhibited high properties reliability.

关 键 词：石墨烯 场效应晶体管 滞回行为 

分 类 号：TN305.99[电子电信—物理电子学]