具有N型缓冲层REBULF Super Junction LDMOS  

New REBULF super junction LDMOS with the N type buffered layer

作　　者：段宝兴[1] 曹震[1] 袁小宁[1] 杨银堂[1] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《物理学报》2014年第22期283-288,共6页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:2014CB339900);国家自然科学基金重点项目(批准号:61234006);国家自然科学基金重点项目(批准号:61334002)资助的课题~~

摘　　要：针对功率集成电路对低损耗LDMOS(lateral double-diffused MOSFET)类器件的要求,在N型缓冲层super junction LDMOS(buffered SJ-LDMOS)结构基础上,提出了一种具有N型缓冲层的REBULF(reduced BULk field)super junction LDMOS结构.这种结构不但消除了N沟道SJ-LDMOS由于P型衬底带来的衬底辅助耗尽效应问题,使super junction的N区和P区电荷完全补偿,而且同时利用REBULF的部分N型缓冲层电场调制效应,在表面电场分布中引入新的电场峰而使横向表面电场分布均匀,提高了器件的击穿电压.通过优化部分N型埋层的位置和参数,利用仿真软件ISE分析表明,新型REBULF SJ-LDMOS的击穿电压较一般LDMOS提高了49%左右,较文献提出的buffered SJ-LDMOS结构提高了30%左右.In this paper, a new REBULF （reduced BULk field） SJ-LDMOS （lateral double-diffused MOSFET） is proposed with the N type buffered layer based on the buffered SJ-LDMOS for the low loss of LDMOS used in the power integrated circuits. In this structure, the problem of the substrate-assisted depletion, produced due to the P-type substrate for the N-channel SJ-LDMOS, is eliminated by the N-type buffered layer. The charges for the N-type and P-type pillars are depleted completely. Moreover, a new electric field peak is introduced into the surface electric field distribution, which makes the lateral surface electric field uniform. The breakdown voltage is improved for the REBULF SJ-LDMOS in virtue of the ISE simulation results. By optimizing the location and parameters of the N-type buried layer, the breakdown voltage of REBULF SJ-LDMOS is increased by about 49%compared with that of the conventional LDMOS, and improved by about 30%compared with that of the buffered SJ-LDMOS.

关 键 词：击穿电压 表面电场 

分 类 号：TN386[电子电信—物理电子学]