0.18μm MOS差分对管总剂量失配效应研究  

Total Dose Effect on Mismatch Performance of 0.18μm MOS Differential Pair Transistors

作　　者：吴雪[1,2,3] 陆妩[1,2] 王信[1,2,3] 郭旗[1,2] 张兴尧[1,2,3] 于新[1,2] 

机构地区：[1]中国科学院特殊环境功能材料与器件重点实验室,新疆理化技术研究所,新疆乌鲁木齐830011 [2]新疆电子信息材料与器件重点实验室,新疆乌鲁木齐830011 [3]中国科学院大学,北京100049

出　　处：《原子能科学技术》2014年第10期1886-1890,共5页Atomic Energy Science and Technology

基　　金：模拟集成电路国家重点实验室(NLAIC)基金资助项目(9140C090401120C09036)

摘　　要：为明确深亚微米MOS差分对管在电离辐射环境下晶体管失配表征方法及损伤机理,本文针对0.18μm NMOS、PMOS差分对管,进行了60 Coγ总剂量辐射效应研究。研究结果表明:与PMOS差分对管相比,NMOS差分对管对总剂量辐照更敏感,主要表现在:1)辐照引起NMOS差分对管转移特征曲线失配增加;2)NMOS差分对管阈值电压失配随辐照总剂量的增加而增大;3)栅极电流辐照后稍有增加,失配随栅极电压的增加而增大。而PMOS差分对管在整个辐照过程中,无论是曲线还是参数均未出现明显变化,且失配亦未随辐照总剂量的增加而增大。The study of the total ionizing dose effect of 0.18 μm MOS differential pair transistors which are exposed to a 60Co γ-ray radiation was presented in this paper ,in the view of the characterization of mismatch and degradation mechanism .The results show that NMOS differential pair transistors are more sensitive than PMOS differential pair transistors .In NMOS differential pair transistors ,the mismatch on the transfer characteristic curve and threshold voltage is degraded after irradiation ,whereas this phenomenon does not take place in PMOS differential pair transistors .In addition ,the gate current has the large degree of radiation hardness associated to very thin gate oxide .

关 键 词：MOS差分对管 60^Coγ辐射 失配 

分 类 号：O571.33[理学—粒子物理与原子核物理] TN431.1[理学—物理]