高k栅介质小尺寸全耗尽绝缘体上锗p型金属氧化物半导体场效应晶体管漏源电流模型  

Modeling on drain current of highk gate dielectric fully-depleted nanoscale germanium-on-insulator p-channel metal-oxide-semiconductor field-effect transistor

作　　者：白玉蓉[1] 徐静平[1] 刘璐[1] 范敏敏[1] 黄勇[1] 程智翔 

机构地区：[1]华中科技大学光学与电子信息学院,武汉430074

出　　处：《物理学报》2014年第23期297-305,共9页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:61274112)资助的课题~~

摘　　要：通过求解沟道的二维泊松方程得到沟道表面势和沟道反型层电荷,建立了高k栅介质小尺寸绝缘体上锗(Ge OI)p型金属氧化物半导体场效应晶体管(PMOSFET)的漏源电流解析模型.模型包括了速度饱和效应、迁移率调制效应和沟长调制效应,同时考虑了栅氧化层和埋氧层与沟道界面处的界面陷阱电荷、氧化层固定电荷对漏源电流的影响.在饱和区和非饱和区,漏源电流模拟结果与实验数据符合得较好,证实了模型的正确性和实用性.利用建立的漏源电流模型模拟分析了器件主要结构和物理参数对跨导、漏导、截止频率和电压增益的影响,对Ge OI PMOSFET的设计具有一定的指导作用.An analytical model for drain current of highk gate dielectric fully-depleted nanoscale germanium-on-insulator（Ge OI） p-channel metal-oxide-semiconductor field-effect transistor（PMOSFET） is established by solving two-dimensional Poisson＇s equation to derive the surface potential and inversion charge in the channel region. This drain current model includes velocity-saturation, channel-length modulation and mobility-modulation effects; and it simultaneously considers the impacts of the interface-trapped charges at both gate oxide/channel and buried oxide/channel interfaces and the fixed oxide charges on the drain current. A good agreement between the simulated drain current and experimental data is achieved in both the saturation and non-saturation regions, confirming the validity of the model. Using the model, the influences of the main structural and physical parameters on transconductance, output conductance, cut-off frequency,and voltage gain of the device are investigated. These can be served as a guide for the design of the Ge OI PMOSFET.

关 键 词：绝缘体上锗p型金属氧化物半导体场效应晶体管 漏源电流模型 跨导 截止频率 

分 类 号：TN386[电子电信—物理电子学]