磁控溅射参数对钛酸锶钡薄膜生长及介电性能的影响  

Effect of RF-magnetron sputtering parameters on the growth and dielectric property of BST thin film

作　　者：谢晓康 缑园渊 杨佳[1] 边小兵[1] 周剑平[1] 

机构地区：[1]陕西师范大学物理学与信息技术学院,陕西西安710119

出　　处：《陕西师范大学学报（自然科学版）》2014年第5期37-42,共6页Journal of Shaanxi Normal University：Natural Science Edition

基　　金：国家自然科学基金资助项目(51372148);中央高校基本科研业务费创新团队资助项目(GK201401003)

摘　　要：在Pt/Ti/SiO2/Si(110)衬底上利用射频磁控溅射法制备了Ba1-xSrxTiO3(BST)薄膜.基于薄膜的形核理论,研究了成膜时间、衬底温度、溅射功率、溅射气压、氧氩比、退火热处理等参数对薄膜的表面形貌和介电性能的影响.结果表明:在其他溅射参数一定的条件下,薄膜的厚度随溅射时间成指数关系增长;在退火温度600℃下热处理20min薄膜完全晶化;调节衬底温度、溅射功率、溅射气压等参数有助于制备出表面致密、晶粒大小均匀、具有高介电常数和低损耗的BST薄膜.BST thin films were prepared on Pt/Ti/SiO2/Si substrate by RF-magnetron sputtering. Based on the theory of film nucleation,the surface morphology and dielectric property of film in-fluenced by RF sputtering parameters,such as the sputtering time,substrate temperature,sputte-ring power,sputtering pressure,ratio of oxygen and argon and annealing heat treatment were in-vestigated.The results show that when others sputtering parameters controls,the film thickness increase in a exponential manner with sputtering time.The BST thin films were crystallized when annealing heat treatment in 20 minutes at 600 ℃.The BST thin films with compact surface,uni-form crystalline grain sizes and high dielectric constant,low dielectric loss were obtained by ad-j usting the sputtering parameters.

关 键 词：射频磁控溅射 钛酸锶钡薄膜 表面形貌 介电性能 

分 类 号：O469[理学—凝聚态物理]