二氧化硅纳米花的制备及发光特性研究  

Study on Fabrication of SiO_2 Nano-flower and Its Luminescent Behaviors

作　　者：李玉国[1] 刘永峰[1] 王玉萍[1] 王宇[1] 方香[1] 

机构地区：[1]山东师范大学物理与电子科学学院半导体研究所,济南250014

出　　处：《半导体光电》2014年第4期614-616,共3页Semiconductor Optoelectronics

基　　金：教育部回国人员科研启动基金项目

摘　　要：采用磁控溅射和化学气相沉积技术制备出二氧化硅纳米花。利用扫描电子显微镜(SEM),X射线光电子能谱(XPS)和傅里叶红外吸收谱(FTIR)对上述纳米结构进行结构表征。用荧光光谱仪(PL)对其光致发光特性进行了研究。结果表明在激发波长为325nm时,在394nm处出现一个发光峰,表现出良好的发光特性。SiO2 nano-flowers were prepared by radio frequency sputtering technique and chemical vapor deposition（CVD）.The prepared nanocomposites were characterized by scanning electron microscopy（SEM）,X-ray diffraction（XRD）,and Fourier transform infrared spectroscopy（FTIR）.And also the luminescent behavior of the nanocomposite films was characterized by photoluminescence（PL）.An intensively emission peak at around 394 nm was observed with the excitation wavelength at 325 nm.

关 键 词：SIO2 纳米结构 溅射 光致发光 

分 类 号：TB383[一般工业技术—材料科学与工程]