溶液法制程对有机薄膜晶体管性能影响的研究  

Study on Effects of Solution Process on Performance of Organic Thin-Film Transistors

作　　者：石强[1] 谢应涛[1] 蔡述澄 欧阳世宏[1] 方汉铿 

机构地区：[1]上海交通大学电子信息与电气工程学院光电材料与器件中心,上海200240

出　　处：《半导体光电》2014年第4期617-620,共4页Semiconductor Optoelectronics

摘　　要：基于新型的聚合物绝缘材料和半导体材料,采用溶液法旋涂工艺制作有机薄膜晶体管,通过优化聚合物半导体材料的溶剂、旋涂速度、退火温度等条件,提高有机薄膜晶体管的器件性能。结果表明,不同溶剂溶解半导体对制成的有机薄膜晶体管的迁移率影响明显;半导体层旋涂速度过慢和退火温度过低都会降低有机薄膜晶体管的性能。当采用1,2,4-三氯苯(TCB)作为半导体溶剂,旋涂速度为3 000r/min,后烘温度为190℃时,有机薄膜晶体管的迁移率可以达到约0.5cm2·V-1·s-1,亚阈值摆幅降至约0.6V/dec,开关比大于106。Based on new polymer insulators and semiconductors,organic thin-film transistors（OTFT）were fabricated by using solution process of spin-coating.The performance of OTFT was improved by optimizing the fabrication parameters such as different solvents,spincoating rates and annealing temperatures for polymer semiconductors.The results illustrate that different solvents for polymer semiconductors have an obvious effect on the mobility of OTFT;both low spin-coating rate and low annealing temperature will decrease its performance.When the organic semiconductor is dissolved in 1,2,4-trichlrobenzene,spin-coated at 3 000r/min and annealed at 190℃,the OTFT exhibits a decent mobility up to^0.5cm2·V-1·s-1,a subthreshold swing down to^0.6V/dec and on-off ratio bigger than 106.

关 键 词：溶液法制程 旋涂 聚合物 有机薄膜晶体管 迁移率 

分 类 号：TN321.5[电子电信—物理电子学]