蒲公英状氧化镓纳米线的制备与表征  

Preparation and characterization of dandelion-like Ga_2O_3 nanowires

作　　者：刘永峰[1] 李玉国[1] 王玉萍[1] 

机构地区：[1]山东师范大学物理与电子科学学院,山东济南250014

出　　处：《山东科学》2014年第6期108-112,共5页Shandong Science

基　　金：教育部留学回国人员科研启动基金

摘　　要：在1 200℃对Ga2O3粉末和Au覆盖的Si（111）基片加热不同时间,利用热蒸发法制备Ga2O3纳米线.实验中我们发现了一个新的成核过程,用扫描电子显微镜（SEM）、透射电子显微镜（TEM）和X射线衍射（XRD）技术对样品进行了结构、形貌的表征.SEM显示,在整个样品表面形成大量直径约200～300 nm的蒲公英状纳米线.能量色散谱（EDS）显示,样品为纯净的Ga2O3.由分析可知,生长时间对样品的形态和微观结构有一定的影响.最后,简要讨论了这种奇特结构的生长机制.We prepared Ga2O3 nanowires by heating Ga2O3 powder and Au-coated Si（111） substrates at 1 200℃ with different time. We discovered a new nucleation process in this experiment. We further characterized the structure and appearance of the nanowires by scanning electron microscopy （SEM）, transmission electron microscopy （TEM） and X- Ray Diffraction （XRD）. Large number of dandelion-like Ga2O3 nanowires with diameters of about 200 - 330 nm formed on entire surface of those substrates which was observed by SEM. Energy-dispersive spectrometry （EDS） based observation shows that the products are pure Ga2O3. Experimental results reveal that growth time impacts their morphology and microstructure. We eventually address their growth mechanism.

关 键 词：蒲公英状纳米线 表征 新的成核过程 生长机制 

分 类 号：O484.5[理学—固体物理]