转移过程对CVD生长的石墨烯质量的影响  

The effects of the transfer process on the quality of CVD-grown graphene

作　　者：梁学磊[1,2] 李伟[1,2] CHENG GuangJun CALIZO Irene HACKER Christina A HIGHT WALKER Angela R RICHTER Curt A 彭练矛[1] 

机构地区：[1]北京大学电子学系,纳米器件物理与化学教育部重点实验室 [2]Nanoelectronics Group,Semiconductor and Dimensional Metrology Division,National Institute of Standards and Technology,Gaithersburg MD 20899, USA

出　　处：《科学通报》2014年第33期3322-3328,共7页Chinese Science Bulletin

基　　金：国家重大科学研究计划(2011CB921904);教育部科学技术研究项目(113003A)资助

摘　　要：利用化学气象沉淀法(CVD)在金属衬底上生长的石墨烯制备电子器件需要先把石墨烯转移到绝缘基底上,转移过程对器件制备的成功率和性能的均匀性有重要影响.转移过程中导致的石墨烯破损和金属生长基底残余颗粒污染受到普遍重视,然而由金属基底腐蚀液导致的石墨烯表面污染还没有引起足够的重视.本文利用拉曼光谱和X射线光电子能谱(XPS)证明了转移过程中金属基底腐蚀液会在石墨烯表面引入污染,利用我们发展的"改良的RCA(radio corporation of America)清洗(modified RCA clean)"转移工艺能够有效地去除这种污染.这对提高后续制备的电子器件的性能有重要意义.Graphene grown by chemical-vapor deposition （CVD） on metal substrates has to be transferred onto an insulating substrate before it can be made into electronic devices. The transfer process affects the yield and performance uniformity of the devices, To improve the quality of transferred graphene, numerous researchers are focusing on how to reduce crack formation and metal particle residues resulting from the transfer process. However, surface contamination introduced by the metal-substrate etchants has not been paid enough attention. In this paper, using Rarnan and X-ray photoemission spectroscopy （XPS）, we prove that metal etchants contaminate the graphene surface, and such contamination can be effectively removed by our developed “modified RCA clean” process. These results are important for improving the performance of the fabricated graphene devices.

关 键 词：石墨烯 转移 污染 拉曼光谱 XPS 

分 类 号：O613.71[理学—无机化学]