瞬态电压抑制二极管的建模及仿真  

Modeling and simulation of the transient voltage suppression diode

作　　者：黄薇[1] 罗启元[1] 蒋同全 汪洋[1] 金湘亮[1] 

机构地区：[1]湘潭大学物理与光电工程学院,湖南湘潭411105

出　　处：《太赫兹科学与电子信息学报》2014年第6期927-931,936,共6页Journal of Terahertz Science and Electronic Information Technology

基　　金：国家自然科学基金资助项目(61274043);教育部科学技术研究重点基金资助项目(212125);湘潭大学大学生创新基金资助项目

摘　　要：基于0.5μm CMOS工艺,设计瞬态电压抑制(TVS)二极管。利用黑箱理论对该器件在高电压大电流下的反向工作特性建模,在Matlab数值模拟工具中利用所建模型仿真,获得了包含一次击穿、二次击穿(硬失效)点的反向I–U特性曲线;基于Silvaco TCAD工艺器件仿真平台,经DC仿真验证所建模型的准确性。仿真结果表明,2种方法获得的特性曲线基本吻合,本文所建数值模型能够预测TVS二极管瞬态电压抑制时的电特性。Based on 0.5μm CMOS process,a Transient Voltage Suppressor(TVS) diode is designed. Using the black box theory to build the negative operating character under high voltage and high current of the device,the curve containing the first breakdown point and the second breakdown(hardware failure) point is obtained by Matlab. In order to configure the accuracy of the model, the Silvaco TCAD(Computer Aided Design Technology) device simulation platform is adopted. The curves of two strategies are basically equal. And the model built can predict the electronic characteristic of TVS diode when suppressing transient voltage.

关 键 词：静电放电 TVS二极管 热源模型 计算机辅助设计仿真 二次击穿点 

分 类 号：TN31[电子电信—物理电子学]