薄膜混合集成工艺在射频通道电路中的应用研究  

Research of Thin Film Hybrid Integrated Process in RF Circuit Applicatoin

作　　者：车江波[1] 童洋[1] 李林森[1] 周婷[1] 

机构地区：[1]中国电子科技集团公司第43研究所,合肥230088

出　　处：《混合微电子技术》2014年第3期21-26,共6页Hybrid Microelectronics Technology

摘　　要：薄膜混合集成工艺具有互连密度高、集成度高、可制造高功率密度电路以及整个封装结构具有系统级功能等突出特点，在射频领域应用优势显著，特别是在机载、弹载、星载或航天领域中具有很强的竞争力。本文以某射频通道产品研制过程为基础，系统深入探讨了射频通道产品的工艺结构、薄膜金属化通孔基板、功率砷化镓芯片焊接、多温度梯度焊接以及大面积再流焊接等先进的工艺技术。通过研究，形成了系统化的应用于射频通道电路的薄膜混合集成工艺平台，应用该平台研制成功的射频电路模块，具有精度高、体积小、重量轻、可靠性高等突出特点，充分表明薄膜混合集成工艺是一种非常有实力的射频通道电路模块和收发组件制造技术。Thin film hybrid integrated process has features of high density of intereonnection, high integration, high power density and the packaging structure with system -level functions. The advantages in the field of radio frequency （RF） application are obvious ,especially in space- borne and air- borne, missile and space fields. In this paper, the technology of RF channel structures, thin film metalized - plate, power gallium arsenide chip welding , multi - temperature gradients welding and large areas of reflow welding are discussed on the basis of a RF channel product development process. Through the research, a systematic thin film hybrid integrated technology platform of RF channel circuit is established. The RF circuit modules developed on the platform have prominent features such as high precision, small volume, light weight and high reliability. It fully shows that the thin film hy- brid integrated process is a very powerful manufacturing techniques for RF channel circuit module and transceiver module.

关 键 词：薄膜 射频电路 混合集成 组装 

分 类 号：TN492[电子电信—微电子学与固体电子学] TN409