基于CMOS工艺的差分放大器单粒子瞬态效应研究  

Research on Single Event Transient Effect of Differential Amplifier Based on CMOS Technology

作　　者：周昕杰[1] 于宗光[1] 李博[1] 

机构地区：[1]中国电子科技集团公司第五十八研究所,江苏无锡214035

出　　处：《固体电子学研究与进展》2014年第6期576-579,共4页Research & Progress of SSE

基　　金：江苏省333工程科研资助项目(BRA2011115)

摘　　要：基于0.35μm CMOS工艺,研究了辐射条件下,单粒子瞬态效应对差分放大器的影响。经过仿真分析发现:差分放大器中偏置电路输出节点对单粒子瞬态效应敏感,偏置电路输出电流大小决定了放大器输出信号抗单粒子瞬态效应的能力。为提高差分放大器的抗单粒子瞬态效应的能力,采取增加偏置电路输出驱动能力以及引入电阻/电容等加固设计技术。经过Hspice仿真及单粒子辐照实验证明,辐射加固后的放大器抗单粒子瞬态扰动能力从未加固的18 MeV·cm2/mg增加到37 MeV·cm2/mg,抗单粒子辐射性能提高了一倍以上。加固后的放大器能够满足航天应用的需求。Based on the 0.35μm CMOS technology, the influence of the Single Event Transi ent （SET） effect on the differential amplifier in the radiation condition is studied. Through the simulation analysis, it is found that the differential amplifier bias circuit output node is sensitive to SET effect, and output current value of bias circuit determines the anti-SET ability of amplifier output signal. In order to enhance the anti-SET ability of amplifier output signal, increasing the bias circuit output driving and employing radiation hardened technology such as resistance/capaci- tance are considered. The simulation and experiments show that the anti-radiation ability of am- plifier rises from 18 MeV · cm^2/mg to 37 MeV ·cm^2/mg in the case that radiation hardened de sign is used, and the improved amplifier can meet the needs of space application.

关 键 词：差分放大器 单粒子瞬态效应 辐射加固 

分 类 号：TN386[电子电信—物理电子学] TN722