功率快恢复二极管反偏ESD与雪崩耐量仿真  

Simulation of Reverse Biased ESD and Avalanche Ruggedness of Power Fast Recovery Diode

作　　者：屈静[1] 吴郁[1] 刘钺杨 贾云鹏[1] 匡勇[1] 李蕊[1] 苏洪源[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124 [2]国网智能电网研究院电工新材料及微电子研究所,北京100192

出　　处：《半导体技术》2015年第1期24-28,共5页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61176071);教育部博士点学科专项科研基金资助项目(20111103120016);国家电网公司科技项目(SGRI-WD-71-13-006)

摘　　要：静电放电(ESD)失效与雪崩耐量是影响高压硅功率二极管,如功率快恢复二极管(FRD)性能及可靠性的两个主要因素。利用ISE TCAD平台,采用简明分段线性电流源,分别对功率FRD反偏ESD过程及雪崩耐量进行仿真计算,讨论二者的共性和差异。结果表明,器件外端电压波形均经历过冲、负阻振荡和平缓发展三个阶段,对应器件内部的"过耗尽"、雪崩注入、载流子及电场分布涨落等复杂变化,差别在于反偏ESD造成的电压过冲更明显,且出现典型的U型电场分布,与雪崩耐量相比对器件造成的影响更剧烈。为改善器件在反偏ESD和雪崩耐量测试过程中的电流丝化问题,考察了结构参数对器件抗ESD能力和雪崩耐量的影响,发现提高n-区掺杂浓度和阳极表面浓度对提高抗ESD能力和雪崩耐量起到促进作用。Electrostatic discharge （ESD） failure and avalanche ability are the two major factors which affects the ruggedness of high-voltage silicon power bipolar devices e. g the power fast recovery diode （FRD）. Based on the ISE TCAD, simulation of power FRD on reverse biased ESD and avalanche ruggedness were respectively calculated by using simple piecewise-linear current-source model. The commonness and differences between them were analyzed and discussed. The results show that the terminal voltage waveform of the devices have three stages including overshoot, negative resistance oscillation and stable development. Accordingly, the inside over-depletion, avalanche injection and fluctuation of caniers and electric field distribution, etc. The difference is that the over-shoot voltage of ESD is higher and the electric field presents a typical U-shaped distribution. As a result, the effect of ESD on the devices is more severe than that of avalanche ruggedness. To alleviate the current filament at the conner of pn junction during reverse biased ESD and the test of avalanche ruggedness, the influence of device parameters on ESD resistance and avalanche ruggedness were investigated. The simulation results show that improving the doping concentration of n^- region and anode surface concentration can boost the ability to resist ESD and avalanche ruggedness.

关 键 词：快恢复二极管(FRD) 静电放电(ESD) 雪崩耐量 电压过冲 雪崩注入 

分 类 号：TN313.4[电子电信—物理电子学]