GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics  

作　　者：赵连锋 谭桢 王敬 许军 

机构地区：[1]Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University

出　　处：《Chinese Physics B》2015年第1期524-527,共4页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China(Grant No.2011CBA00602);the National Science and Technology Major Project of the Ministry of Science and Technology of China(Grant No.2011ZX02708-002)

摘　　要：GaSb p-channel metal-oxide-semiconductor field-effect transistors （MOSFETs） with an atomic layer deposited Al2O3 gate dielectric and a self-aligned Si-implanted source/drain are experimentally demonstrated. Temperature dependent electrical characteristics are investigated. Different electrical behaviors are observed in two temperature regions, and the un- derlying mechanisms are discussed. It is found that the reverse-bias pn junction leakage of the drain/substrate is the main component of the off-state drain leakage current, which is generation-current dominated in the low temperature regions and is diffusion-current dominated in the high temperature regions. Methods to further reduce the off-state drain leakage current are given.GaSb p-channel metal-oxide-semiconductor field-effect transistors （MOSFETs） with an atomic layer deposited Al2O3 gate dielectric and a self-aligned Si-implanted source/drain are experimentally demonstrated. Temperature dependent electrical characteristics are investigated. Different electrical behaviors are observed in two temperature regions, and the un- derlying mechanisms are discussed. It is found that the reverse-bias pn junction leakage of the drain/substrate is the main component of the off-state drain leakage current, which is generation-current dominated in the low temperature regions and is diffusion-current dominated in the high temperature regions. Methods to further reduce the off-state drain leakage current are given.

关 键 词：GASB metal-oxide-semiconductor field-effect transistor temperature dependent characteristics drain leakage current 

分 类 号：TN386[电子电信—物理电子学]