65nm工艺SRAM低能质子单粒子翻转实验研究  

Single Event Upset Test of Low Energy Proton on 65nm SRAM

作　　者：何安林[1] 郭刚[1] 陈力 沈东军[1] 任义 刘建成[1] 张志超 蔡莉[1] 史淑廷[1] 王惠[1] 范辉[1] 高丽娟[1] 孔福全[1] 

机构地区：[1]中国原子能科学研究院核物理研究所,北京102413 [2]萨斯喀彻温大学电子与计算机工程学院

出　　处：《原子能科学技术》2014年第12期2364-2369,共6页Atomic Energy Science and Technology

基　　金：国家自然科学基金资助项目(11105230)

摘　　要：基于北京HI-13串列加速器质子源及技术改进工作,获得2~15 MeV低能质子束流。针对商业级65nm工艺4M×18bit大容量随机静态存储器（SRAM）,开展了质子单粒子翻转实验研究。实验结果表明,低能质子通过直接电离机制可在存储器中引起显著的单粒子翻转,其翻转截面较核反应机制引起的翻转截面大2~3个数量级。结合实验数据分析了质子翻转机制、LET值及射程、临界电荷及空间软错误率等,分析结果表明,实验器件翻转临界电荷约为0.97fC,而低能质子超过高能质子成为质子软错误率的主要贡献因素。Based on the Beijing HI-13 tandem accelerator proton beam source and technical improvements,2-15 MeV low energy proton beam was obtained.Single event upset（SEU）test of low energy proton was carried out on commercial 65 nm 4M×18bit large capacity SRAM.The test result shows that low energy proton can induce upset in SRAM through direct ionization mechanism,and the SEU cross section caused by this mechanism is about 2-3 magnitude order larger than that caused by nuclear reaction mechanism.With the test data,the proton upset mechanism,LET and range,critical charge,and on-orbit soft error rate（SER）were analyzed.The results show that the critical charge of the tested SRAM is about 0.97 fC and the low energy proton SER canbe a significant contribution to total proton SER in space.

关 键 词：质子 单粒子翻转 直接电离 随机静态存储器 软错误率 

分 类 号：TL99[核科学技术—核技术及应用]